technical data pnp high voltage silicon transistor qualified per m il - prf - 1 9 5 0 0 / 3 9 7 devices qualified level 2n3743 2n4930 2n4931 jan, jantx jantxv maximum ratings ratings sym 2n3743 2n4930 2n4931 unit collector - emitter voltage v ceo 300 200 250 vdc collector - base voltage v cbo 300 200 250 vdc emitter - base voltage v ebo 5.0 vdc collector current i c 200 madc total power dissipation @t a = +25 0 c 1 @t c = +25 0 c 2 p t 1.0 5.0 w w operating & storage junction temperature range t j , t stg - 65 to +200 0 c thermal characteristics characteristics symbol max. unit thermal resistance junction - to - case r q jc 35 0 c/w 1) derate linearly 5.71 mw/ 0 c for t a > +25 0 c 2) derate linearly 28.6 mw/ 0 c for t c > +25 0 c to - 39* (to - 205ad) *see appendix a for package out line electrical characteristics (t c = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 1.0 madc 2n3743 2n4930 2n4931 v (br) ceo 300 200 250 vdc collector - emitter breakd own voltage i c = 100 m adc 2n3743 2n4930 2n4931 v (br) cbo 300 200 250 vdc emitter - base breakdown voltage i e = 100 m adc v (br) ebo 5.0 vdc collector - base cutoff current v cb = 250 vdc 2n3743 v cb = 150 vdc 2n4930 v cb = 200 vdc 2n4931 i cbo 250 250 250 h adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 downloaded from: http:///
2n3743, 2n4930, 2n4931, jan series electrical characteristics (cont) characteri stics symbol min. max. unit emitter - base cutoff current v eb = 4.0 vdc i ebo 150 h adc on characteristics (3) forward - current transfer ratio i c = 0.1 madc, v ce = 10 vdc i c = 1.0 madc, v ce = 10 vdc i c = 10 madc, v ce = 10 vdc i c = 30 ma dc, v ce = 10 vdc i c = 50 madc, v ce = 20 vdc h fe 30 40 40 50 30 200 collector - emitter saturation voltage i c = 30 madc, i b = 3.0 madc i c = 10 madc, i b = 1.0 madc v ce(sat) 1.2 1.0 vdc base - emitter saturation voltage i c = 10 madc, i b = 1.0 madc i c = 30 madc, i b = 3.0 madc v be(sat) 1.0 1.2 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 10 madc, v ce = 20 vdc, f = 20 mhz ? h fe ? 2.0 8.0 small - signal s hort - circuit forward current transfer ratio i c = 10 madc, v ce = 10 vdc, f = 1.0 khz h fe 30 300 output capacitance v cb = 20 vdc, i e = 0, f 3 0.1 mhz c obo 15 pf input capacitance v eb = 1.0 vdc, i c = 0, f 3 0.1 mhz c ibo 400 pf safe operating a rea dc tests t c = +25 0 c, 1 cycle, t 3 1.0 s test 1 v ce = 20 vdc, i c = 50 madc all types test 2 v ce = 100 vdc, i c = 10 madc all types test 3 v ce = 300 vdc, i c = 3.3 madc 2n3743 v ce = 200 vdc, i c = 5.0 madc 2n4930 v ce = 250 vdc, i c = 4.0 madc 2n4931 (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2 downloaded from: http:///
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